IRG4BC15MD insulated gate bipolar transistor with ultrafast soft recovery diode features features features features features e g n-channel c v ces = 600v v ce(on) typ. = 1.88v @v ge = 15v, i c = 8.6a parameter min. typ. max. units r q jc junction-to-case - igbt CCC CCC 2.7 r q jc junction-to-case - diode CCC CCC 7.0 c/w r q cs case-to-sink, flat, greased surface CCC 0.50 CCC r q ja junction-to-ambient, typical socket mount CCC CCC 80 wt weight CCC 2 (0.07) CCC g (oz) thermal resistance 5/25/01 absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 14 i c @ t c = 100c continuous collector current 8.6 i cm pulsed collector current ? 28 a i lm clamped inductive load current ? 28 i f @ t c = 100c diode continuous forward current 4.0 t sc short circuit withstand time 12 s i fm diode maximum forward current 16 a v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 49 p d @ t c = 100c maximum power dissipation 19 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1 n?m) ? rugged: 10sec short circuit capable at vgs = 15v ? low vce(on) for 4 to 10khz applications ? igbt co-packaged with ultra-soft-recovery anti-parallel diodes ? industry standard to-220ab package benefits ? best value for appliance and industrial applications ? offers highest efficiency and short circuit capability for intermediate applications ? provides best efficiency for the mid range frequency (4 to 10khz) ? optimized for appliance and industrial applications up to 1hp ? high noise immune "positive only" gate drive - negative bias gate drive not necessary ? for low emi designs - requires little or no snubbing ? single package switch for bridge circuit applications ? compatible with high voltage gate drive ic's ? allows simpler gate drive pd- 94151a w t o -22 0 ab www.irf.com 1 short circuit rated fast igbt
IRG4BC15MD parameter min. typ. max. units conditions q g total gate charge (turn-on) CCC 46 CCC i c = 8.6a qge gate - emitter charge (turn-on) CCC 4.2 CCC nc v cc = 400v q gc gate - collector charge (turn-on) CCC 15 CCC v ge = 15v t d(on) turn-on delay time CCC 21 CCC t j = 25c t r rise time CCC 38 CCC ns i c = 8.6a, v cc = 480v t d(off) turn-off delay time CCC 540 810 v ge = 15v, r g = 75 w t f fall time CCC 350 530 energy losses include "tail" and e on turn-on switching loss CCC 0.32 CCC diode reverse recovery. e off turn-off switching loss CCC 1.93 CCC mj e ts total switching loss CCC 2.25 3.6 t d(on) turn-on delay time CCC 20 CCC t j = 150c, t r rise time CCC 42 CCC ns i c = 8.6a, v cc = 480v t d(off) turn-off delay time CCC 650 CCC v ge = 15v, r g = 75 w t f fall time CCC 590 CCC energy losses include "tail" and e ts total switching loss CCC 3.0 CCC mj diode reverse recovery. l e internal emitter inductance CCC 7.5 CCC nh measured 5mm from package c ies input capacitance CCC 340 CCC v ge = 0v c oes output capacitance CCC 35 CCC pf v cc = 30v c res reverse transfer capacitance CCC 8.8 CCC ? = 1.0mhz t rr diode reverse recovery time CCC 28 42 ns t j = 25c CCC 38 57 t j = 125c i f = 4.0a i rr diode peak reverse recovery current CCC 2.9 5.2 a t j = 25c CCC 3.7 6.7 t j = 125c v r = 200v q rr diode reverse recovery charge CCC 40 60 nc t j = 25c CCC 70 110 t j = 125c di/dt 200a/s di (rec)m /dt diode peak rate of fall of recovery CCC 280 CCC a/s t j = 25c during t b CCC 240 CCC t j = 125c parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage ? 600 CCC CCC v v ge = 0v, i c = 250a d v (br)ces / d t j temperature coeff. of breakdown voltage CCC 0.65 CCC v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage CCC 1.88 2.3 i c = 8.6a v ge = 15v CCC 2.6 CCC v i c = 14a CCC 2.1 CCC i c = 8.6a, t j = 150c v ge(th) gate threshold voltage 4.0 CCC 6.5 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage CCC -10 CCC mv/c v ce = v ge , i c = 250a g fe forward transconductance ? 2.3 3.4 CCC s v ce = 100v, i c = 6.5a i ces zero gate voltage collector current CCC CCC 250 a v ge = 0v, v ce = 600v CCC CCC 1400 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop CCC 1.5 1.8 v i c = 4.0a CCC 1.4 1.7 i c = 4.0a, t j = 150c i ges gate-to-emitter leakage current CCC CCC 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified)
IRG4BC15MD fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 0.1 1 10 100 0.1 1 10 v , collector-to-emitter volta g e (v) i , collector-to-emitter current (a) ce c v = 15v 20 s pulse width ge t = 25 c j t = 150 c j 0.1 1 10 100 5.0 10.0 15.0 20.0 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5 s pulse width cc t = 150 c j t = 25 c j 0.1 1 10 100 f , frequency ( khz ) 0 2 4 6 8 10 load current ( a ) duty cycle : 50% tj = 125c tsink = 90c gate drive as specified turn-on losses include effects of reverse recovery power dissipation = 11w 60% of rated voltage ideal diodes
IRG4BC15MD fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 3 6 9 12 15 t , case temperature ( c) maximum dc collector current(a) c -60 -40 -20 0 20 40 60 80 100 120 140 t j , junction temperature (c) 1.0 2.0 3.0 4.0 v ce , collector-to emitter voltage (v) i c = 17a v ge = 15v 80s pulse width i c = 9.0a i c = 4.3a
IRG4BC15MD fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 0 10 20 30 40 50 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 9.0a cc c 0 10 20 30 40 50 60 70 80 r g , gate resistance ( w ) 2.00 2.10 2.20 2.30 total switching losses (mj) v cc = 480v v ge = 15v t j = 25c i c = 8.6a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.1 1 10 100 total switching losses (mj) r g = 75 w v ge = 15v v cc = 480v i c = 17a i c = 9.0a i c = 4.3a 1 10 100 0 100 200 300 400 500 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies g e g c , ce res g c oes ce g c c ies c oes c res
IRG4BC15MD fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa 2 4 6 8 10 12 14 16 18 i c , collector current (a) 0.0 2.0 4.0 6.0 8.0 10.0 total switching losses (mj) r g = 75 w tj = 150c v ge = 15v v cc = 480v 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 i c , collector-to-emitter current (a) v ge = 20v t j = 125 safe operating area 0.1 1 10 100 0.0 1.0 2.0 3.0 4.0 5.0 6.0 fm forward volta g e drop - v ( v ) t = 150c t = 125c t = 25c j j j forward voltage drop - v fm ( v )
IRG4BC15MD fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt, fig. 14 - typical reverse recovery vs. di f /dt fig. 15 - typical recovery current vs. di f /dt di (rec) m/dt- (a /s) qrr- (nc) irr- ( a) trr- (nc) 20 25 30 35 40 45 50 100 1000 f di /dt - ( a/ s ) i = 8.0a i = 4.0a f f v = 200v t = 125c t = 25c r j j 0 2 4 6 8 10 12 14 100 1000 f i = 8.0a i = 4.0a v = 200v t = 125c t = 25c r j j di /dt - ( a/ s ) f f 0 40 80 120 160 200 100 1000 f di /dt - ( a/ s ) i = 8.0a i = 4.0a v = 200v t = 125c t = 25c r j j f f 100 1000 100 1000 f di /dt - ( a/ s ) a i = 8.0a i = 4.0a v = 200v t = 125c t = 25c r j j f f
IRG4BC15MD same type device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+ 5 s vce ic dt 90% vge +vge eoff = fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery w aveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr vd ic dt vce ic dt ic dt vce ic dt
IRG4BC15MD vg gate signal device under test current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit r l = 480v 4 x i c @25c 0 - 480v figure 18e. macro waveforms for figure 18a's test circuit
IRG4BC15MD case outline to-220ab notes: ? repetitive rating: v ge =20v; pulse width limited by maximum junction temperature ? v cc =80%(v ces ), v ge =20v, l=10h, r g = 75 w ? pulse width 80s; duty factor 0.1%. ? pulse width 5.0s, single shot. 0.55 (.022) 0.46 (.018) 3 x 2.92 (.115) 2.64 (.104) 1.32 (.052) 1.22 (.048) - b - 4.69 (.185) 4.20 (.165) 3.78 (.149) 3.54 (.139) - a - 6.47 (.255) 6.10 (.240) 1.15 (.045) m in 4.06 (.160) 3.55 (.140) 3 x 3.96 (.160) 3.55 (.140) 3 x 0.93 (.037) 0.69 (.027) 0.36 (.014) m b a m 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 1.40 (.055) 1.15 (.045) 3 x 2.54 (.100) 2x 1 2 3 4 conforms to jedec outline to-220ab d im e ns io ns in m illim e ters a nd ( inches ) lead assignments 1 - g a te 2 - c o lle c to r 3 - em it te r 4 - c o lle c to r notes: 1 dimensions & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 d im e n s io n s a r e s h o w n m illim e te r s ( inches ) . 4 conforms to jedec outline to-220ab. data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 05/01
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